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 TLP741G
TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor
TLP741G
Office Machine Household Use Equipment Solid State Relay Switching Power Supply
The TOSHIBA TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. * * * * * Peak off-state voltage: 400V(min.) Trigger LED current: 10mA(max.) On-state current: 150mA(max.) UL recognized: UL1577, file no. E67349 BSI approved: BS EN60065: 1994 Certificate no. 6617 BS EN60950: 1992 Certificate no. 7366 Isolation voltage: 4000Vrms(min.) Option (D4) type VDE approved: DIN VDE0884/08, 87 Certificate no. 65640 Maximum operating insulation voltage: 630VPK Highest permissible over voltage: 6000VPK (Note) When a VDE0884 approved type is needed, please designate the "option (D4)" TOSHIBA Weight: 0.35 g 11-7B1 Unit in mm
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Pin Configuration (top view)
7.62mm pich standard type * Creepage distance: Clearance: Insulation thickness: 7.0mm(min.) 7.0mm(min.) 0.5mm(min.)
10.16mm pich (LF2) type 8.0mm(min.) 8.0mm(min.) 0.5mm(min.)
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TLP741G
Maximum Ratings (Ta = 25C)
Characteristic Forward current Forward current derating (Ta 39C) Peak forward current (100s pulse, 100pps) LED Power dissipation Power dissipation derating (Ta 25C) Reverse voltage Junction temperature Peak forward voltage(RGK = 27k) Peak reverse voltage(RGK = 27k) On-state current On-state current derating (Ta 25C) Detector Peak on-state current (100s pulse, 120pps) Peak one cycle surge current Peak reverse gate voltage Power dissipation Power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1 min., R.H. 60%) Symbol IF IF / C IFP PD PD / C VR Tj VDRM VRRM IT(RMS) IT / C ITP ITSM VGM PD PD / C Tj Tstg Topr Tsol PT PT / C BVS Rating 60 -0.7 1 100 -1.0 5 125 400 400 150 -2.0 3 2 5 150 -2.0 100 -55~125 -55~100 260 250 -3.3 4000 Unit mA mA / C A mW mW / C V C V V mA mA / C A A V mW mW / C C C C C mW mW / C Vrms
Recommended Operating Conditions
Characteristic Supply voltage Forward current Operating temperature Gate to cathode resistance Gate to cathode capacity Symbol VAC IF Topr RGK CGK Min. 15 -25 Typ. 20 27 0.01 Max. 120 25 85 33 0.1 Unit Vac mA C k F
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Individual Electrical Characteristics (Ta = 25C)
Characteristic Forward voltage LED Reverse current Capacitance Off-state current Symbol VF IR CT IDRM IF = 10mA VR = 5V V = 0, f = 1MHz VAK = 400V RGK = 27k VKA = 400V RGK = 27k ITM = 100mA RGK = 27k VD = 280V, RGK = 27k V = 0, f = 1MHz Anode to gate Gate to cathode Ta = 25C Ta = 100C Ta = 25C Ta = 100C Test Condition Min. 1.0 5 Typ. 1.15 30 10 1 10 1 0.9 0.2 10 20 350 Max. 1.3 10 5000 100 5000 100 1.3 Unit V A pF nA A nA A V mA V/s pF
Reverse carrent Detector On-state voltage Holding current Off-state dv / dt Capacitance
IRRM VTM IH dv/dt Cj
Coupled Characteristics (Ta = 25C)
Characteristic Trigger LED current Turn-on time Coupled dv/dt Capacitance (input to output) Isolation resistance Symbol IFT tON dv/dt CS RS Test Condition VAK = 6V, RGK = 27k IF = 30mA, VAA = 50V, RGK = 27k VS = 500V, RGK = 27k VS = 0, f = 1MHz VS = 500V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 500 1x1012 4000 Typ. 4 10 0.8 1014 10000 10000 Max. 10 Unit mA s V/s pF Vrms Vdc
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TLP741G
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TLP741G
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TLP741G
RESTRICTIONS ON PRODUCT USE
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000707EBC
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.
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2002-09-25


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